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 RB085T-90
Diodes
Schottky barrier diode
RB085T-90
Applications Switching power supply External dimensions (Unit : mm)
4.50.3 0.1
Structure
8.00.2 12.00.2
Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
1.2
10.00.3 0.1
2.80.2 0.1
15.00.4 0.2 13.5MIN
Construction Silicon epitaxial planar
1.3 0.8 (1) (2) (3)
5.00.2
0.70.1 0.05
8.0
2.60.5
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current*1 Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature (*1)Tc=100max Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 10 100 150 -40 to +150 Unit V V A A
Electrical characteristic (Ta=25C)
Parameter Forward characteristics Reverse characteristics Thermal impedance Symbol VF IR jc Min. Typ. Max. 0.83 150 2.5 Unit V A /W Conditions IF=5A VR=90V junction to case
Rev.B
1/3
RB085T-90
Diodes
Electrical characteristic curves
10 Ta=150 1 Ta=125 Ta=75 0.1 Ta=25 Ta=-25
REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A)
100000 10000 1000 100
Ta=150 Ta=125 Ta=75 Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000 f=1MHz
100
10 1 0.1 0.01 Ta=-25
10
0.01
0.001 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
1 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
790 780 770 760 750
AVE:715.7mV AVE:766.6mV :1.7301mV Ta=25 Ta=25 IF=10A IF=5A n=30pcs
200 180
REVERSE CURRENT:IR(uA)
550 Ta=25 VR=90V n=30pcs 540 530
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
FORWARD VOLTAGE:VF(mV)
n=30pcs
160 140 120 100 80 60 40 20 0 AVE:14.3uA
520 510 500 490 480 470 460 450 AVE:498.5pF
Ta=25 f=1MHz VR=0V n=10pcs
740
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A)
30 25 20 15 10 5 0
IFSM DISRESION MAP trr DISPERSION MAP
1000
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50 0
Ifsm
1cyc 8.3ms
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 8.3ms 8.3ms 1cyc
100
AVE:136.0A
AVE:7.40ns
10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
100
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Mounted on epoxy board
IF=5A IM=100mA
15
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm
time
D=1/2 Rth(j-a)
FORWARD POWER DISSIPATION:Pf(W)
t
10
300us 1ms
10 Sin(180)
DC
100
1
Rth(j-c)
5
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 5 10 15 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 20
Rev.B
2/3
RB085T-90
Diodes
10
30
30
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
8
REVERSE POWER DISSIPATION:PR (W)
t T
6 Sin(180) 4 2 0 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 90 D=1/2 DC
20
DC D=1/2
VR D=t/T VR=45V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0A 0V
Io
0A 0V 20 DC D=1/2 10 Sin(180)
Io t T VR D=t/T VR=45V Tj=150
10 Sin(180)
0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150
0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 150
30 No break at 30kV 25
ELECTROSTATIC DISCHARGE TEST ESD(KV)
20 15 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k AVE:5.30kV
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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